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Laser Technology

VERTILAS' unique Buried Tunnel Junction (BTJ) laser diode technology offers a wavelength range of 1.3 µm to 2.3 µm. VERTILAS is one of the leading global providers in the field of long wavelength Vertical Cavity Surface Emitting Laser diodes (VCSEL), deploying reliable and cost efficient production methods.

Vertilas has pioneered the development of InP based long wavelength (lw) VCSELs. This laser design features a dielectric bottom mirror, a buried tunnel junction for the current confinement, a gold substrate acting as a heat sink, a multi quantum well (MQW) active region and an optimized waveguide design.

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The essential VCSEL properties are:

  • Low current threshold and power consumption,

  • Single-mode operation,

  • High efficiency,

  • Circular optical beam,

  • Cost-effeicient fabrication and testing capability,

  • 1D and 2D VCSEL arrays.

InP BTJ Technology

  • Optimized thermal design

  • Current confinement by BTJ (not oxide)

  • Polarization stabilized

  • Passed 30k hrs accelerated aging

  • Telcordia compliant qualification

  • Singlets, 1D and 2D arrays

  • Addressing applications from 1.3 µm to 2.3 µm 

  • Single mode and and multi mode

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This VCSEL concept has an optimised thermal design that allows laser operation from -20°C to +80°C, some product variants allow an even wider temperature range from -40°C to +90°C. The lasers have a an excellent single mode performance with a side mode suppression ratio of 40 dB and more. The laser device is very power efficient. For example, a single mode emitter consumes typ. only 10 mW to 20 mW in electrical power and reaches more than 5 mW optical power, depending on operating conditions and the laser version.The material structure consists of III-V semiconductors, such as In, P, Al, As and Ga and enables the production of lasers from 1.3 µm to 2.3 µm.

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