top of page
VCSEL Communications
1310 nm 10 Gb/s VCSEL
VL-1310-10G-P2-DS-4ch array
-
VCSEL single mode 1310 nm
-
10 Gb/s NRZ
-
4 channel array
-
Single VCSEL and other arrays available
Specifications 1310 nm VCSEL
Parameter
Symbol
Unit
Max.
Typ.
Min.
Value
Operating Temperature at submount
°C
0
50
75
Forward current @ 75°C
mA
8
Iro-0.5
Rollover current@ 75°C
mA
10
Iro
12
Wavelength
lambda
nm
1280
1310
1355
Optical power Po (chip level) @ 20°C, Iro
Po
mW
2.5
6
3.5
Optical power Po (chip level) @ 75°C, Iro
Po
mW
0.7
2
1.0
Threshold current
lth
mA
0.2
2
4
Threshold voltage
Vth
V
1.2
Forward voltage Iop (75°C) = 8.5mA
Vfo
V
1.5
2.5
Side Mode Suppression Ratio
SMSR
dB
30
35
Linewidth
MHz
10
Extinction Ratio
ER
dB
4.0
1
3dB mod. Bandwidth (S21) @ 20°C
S21
GHz
6
8
10
3dB mod. Bandwidth (S21) @ 75°C
S21
GHz
6
7
8
Wavelength temp. coefficient
nm/°K
0.11
Note 1: ER depends also on module, RF, etc.
Spec_VL-1310-10G-P2-DS-4ch
Operating Temperature at submount
°C
0
50
75
Forward current @ 75°C
mA
8
Iro-0.5
Rollover current@ 75°C
mA
10
Iro
12
Wavelength
lambda
nm
1280
1310
1355
Optical power Po (chip level) @ 20°C, Iro
Po
mW
2.5
6
3.5
Optical power Po (chip level) @ 75°C, Iro
Po
mW
0.7
2
1.5
Threshold current
lth
mA
0.2
2
4.5
Threshold voltage
Vth
V
1.2
Forward voltage Iop (75°C) = 8.5mA
Vfo
V
1.33
2.0
Side Mode Suppression Ratio
SMSR
dB
30
35
Linewidth
MHz
10
Extinction Ratio
ER
dB
4.0
1
3dB mod. Bandwidth (S21) @ 20°C
S21
GHz
6
8
10
3dB mod. Bandwidth (S21) @ 75°C
S21
GHz
6
7
8
Wavelength temp. coefficient
nm/°K
0.11
Performance
10 Gb/s 4ch 1310nm VCSEL array, 50°C
LI & VI Curves
LI Curve
VI Curve
Packages
Please contact us for package options available
-
Bare chip
-
Bare chip on submount
bottom of page